Samsung announces 1TB smartphone storage chip just in time for Galaxy S10+

Samsung Electronics announced the industry's first 1TB eUFS 2.1 (embedded Universal Flash Storage). The chip has already entered mass production so we can expect the next-generation premium smartphones to feature it and the Galaxy S10+ will likely to be the first one.

The new 1TB eUFS chip is just as big as the previous 512GB chip (11.5 x 13mm) while holding double the storage capacity by combining 16 stacked V-NAND flash memory layers and a newly developed controller. But Samsung was able to make substantial speed gains as well.

The new chip boasts sequential read speeds of up to 1000 MB/s and sequential write speed of 260 MB/s. For the record, a standard 2.5-inch SATA SSD caps at around 540 MB/s read speeds, so this is mighty impressive. Compared to the previous generation of 512GB storage, the 1TB chip's random read speeds have increased by 38%.

Here's a small table comparing different

internal memory solutions and their performance:

Memory	Sequential Read	Sequential Write	Random Read	Random Write
1TB eUFS 2.1	1000 MB/s	260 MB/s	58,000 IOPS	50,000 IOPS
512GB eUFS 2.1	860 MB/s	255 MB/s	42,000 IOPS	40.000 IOPS
256GB UFS Card	530 MB/s	170 MB/s	40,0000 IOPS	35.000 IOPS
256 eUFS 2.0	850 MB/s	260 MB/s	45,000 IOPS	40,000 IOPS
128GB eUFS 2.0	300 MB/s	150 MB/s	19,000 IOPS	14,000 IOPS

Source

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